Infineon Launches Sic Grooved Super Junction (TSJ) Technology

Infineon Technology AG (FSE: IFX / OTCQX: IFNNY) is a leader in silicon carbide (SiC) power devices and SiC MOSFET trench gate technology, always leading the industry with solutions combining superior performance and high reliability.Currently, the CoolSiC™ product series covers a voltage range of 400V to 3.3kV, and its application areas include automotive power transmission systems, electric vehicle charging, photovoltaic systems, energy storage and high-power traction inverters.Now, Infineon has launched SiC trench superjunction (TSJ) technology with its rich experience in SiC business development and innovative advantages in the field of silicon-based charge compensation devices (CoolMOS™).

IDPAK encapsulation MDIP-04-01

Peter Wawer, president of Infineon Technology's Zero Carbon Industrial Power Division, said: The launch of TSJ technology has significantly expanded our SiC technology capabilities.The combination of trench gate structure and ultrajunction technology can achieve higher efficiency and a more compact design, which is very important for applications with extremely high performance and reliability requirements.Infineon is committed to gradually expanding its CoolSiC™ product portfolio through SiC TSJ technology.The expansion covers a variety of package formats, including discrete devices, molded and frame packaging modules, and bare wafers.The expanded product portfolio can meet a wide range of application needs in the automotive and industrial fields. 

The first products based on this new technology are IDPAK packaged 1200V power devices suitable for automotive traction inverters.The product makes full use of Infineon's more than 25 years of experience in the field of SiC and silicon-based superjunction technology (CoolMOS™), combining the advantages of trench gate technology and superjunction design.The scalable packaging platform supports up to 800kW of power, enabling highly flexible system configuration.One of the main advantages of this technology is to achieve a more compact design at the same power level by reducing Ron*A by up to 40% to achieve higher power density.In addition, the IDPAK packaged 1200V SiC TSJ power device can increase the main inverter current carrying capacity by up to 25% without sacrificing short circuit capability. 

This technological advancement also brings overall system performance improvements to demanding automotive and industrial applications, including lower energy consumption and heat dissipation requirements, as well as higher reliability.In addition, the system reduces parallel requirements, simplifying the design process and reducing overall system costs.With these innovative advantages, the SiC TSJ power device based on IDPAK package will help design more efficient and cost-effective traction inverters in automotive applications. 

Peter Schiefer, president of Infineon Technology's automotive electronics division, said: As a global leader in the field of automotive semiconductors, Infineon has always led the pace of innovation and helped build a bridge between the advancement of automobile technology and sustainable transportation.Our new SiC superjunction technology based on trench gate structure can improve efficiency and simplify system design, bringing greater value to the electric vehicle power transmission system. 

The Hyundai Motor Development Team is one of the first customers of Infineon TSJ Technology, and they will take full advantage of this technology to improve the performance of its electric vehicle products.The collaboration can help Hyundai develop more efficient and compact electric vehicle powertrains.

(Source: Infineon Industrial Semiconductor)